Lateral and Vertical Heterostructures of h-GaN/h-AlN: Electron Confinement, Band Lineup, and Quantum Structures
نویسندگان
چکیده
منابع مشابه
Band discontinuities in zinc-blende and wurtzite AlN/SiC heterostructures
The AlN/SiC band discontinuities in zinc-blende ~110!, ~111!, and wurtzite ~0001! heterostructures were examined using the ab initio pseudopotential approach. At the nonpolar AlN/SiC~110! junction, we find a valence-band offset of 1.7 eV. At the polar heterojunctions the band alignment depends on the interface composition, and valence-band offsets as high as 2.5 eV are obtained for neutral inte...
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The heterostructured configuration between two-dimensional (2D) semiconductor materials has enabled the engineering of the band gap and the design of novel devices. So far, the synthesis of single-component topological insulator (TI) 2D materials such as Bi2Se3, Bi2Te3, and Sb2Te3 has been achieved through vapor phase growth and molecular beam epitaxy; however, the spatial controlled fabricatio...
متن کاملBand offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy
The band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are measured by X-ray photoemission spectroscopy. A large forward-backward asymmetry is observed in the non-polar GaN/AlN and AlN/GaN heterojunctions. The valence-band offsets in the non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are determined to be 1.33 ± 0.16 and 0.73 ± 0.16 eV, respectively. The large valence-b...
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ژورنال
عنوان ژورنال: The Journal of Physical Chemistry C
سال: 2017
ISSN: 1932-7447,1932-7455
DOI: 10.1021/acs.jpcc.7b08344